NCE55P30K mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
* VDS =-55V,ID =-30A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .
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